55GN01CA-TB-E - ON Semiconductor View larger

55GN01CA-TB-E - ON Semiconductor

ON Semiconductor

55GN01CA-TB-E


Transistors RF Bipolar SWITCHING DEVICE

$ 0.92

7860 7860 Items In Stock

Specification of 55GN01CA-TB-E

Collector- Emitter Voltage VCEO Max 10 V
Maximum Operating Temperature + 150 C
Product Category Transistors RF Bipolar
Frequency 5.5 GHz
Manufacturer ON Semiconductor
Brand ON Semiconductor
Package/Case CP-3
Power Dissipation 200 mW
Packaging Reel
Emitter- Base Voltage VEBO 3 V
Series 55GN01CA
Maximum DC Collector Current 70 mA
Alternate Part No. 863-55GN01CA-TB-E
Configuration Single
Mounting Style SMD/SMT
Continuous Collector Current 5 mA
Manufacturer Part No. 55GN01CA-TB-E
Transistor Type Bipolar Power
Technology Silicon
DC Collector/Base Gain hFE Min 100
Transistor Polarity NPN
Minimum Operating Temperature + 25 C