2SC3646T-TD-E - ON Semiconductor View larger

2SC3646T-TD-E - ON Semiconductor

ON Semiconductor

2SC3646T-TD-E


Transistors Bipolar - BJT BIP NPN 1A 100V

$ 0.86

1310 1310 Items In Stock

Specification of 2SC3646T-TD-E

Manufacturer Part No. 2SC3646T-TD-E
Collector- Base Voltage VCBO 120 V
Product Category Transistors Bipolar - BJT
Mounting Style SMD/SMT
Alternate Part No. 863-2SC3646T-TD-E
Series 2SC3646
Manufacturer ON Semiconductor
Minimum Operating Temperature - 55 C
Gain Bandwidth Product fT 120 MHz
Collector- Emitter Voltage VCEO Max 100 V
Configuration Single
Continuous Collector Current 1 A
Collector-Emitter Saturation Voltage 0.1 V
Emitter- Base Voltage VEBO 6 V
Brand ON Semiconductor
Transistor Polarity NPN
DC Current Gain hFE Max 400
Maximum Operating Temperature + 150 C
Maximum DC Collector Current 2 A
Packaging Reel
Maximum Power Dissipation 1.3 W