2SB1302S-TD-E - ON Semiconductor View larger

2SB1302S-TD-E - ON Semiconductor

ON Semiconductor

2SB1302S-TD-E


Transistors Bipolar - BJT BIP PNP 5A 20V

$ 1.07

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Specification of 2SB1302S-TD-E

Maximum DC Collector Current - 8 A
Collector- Base Voltage VCBO - 25 V
Emitter- Base Voltage VEBO - 5 V
Configuration Single
Maximum Power Dissipation 1.3 W
Transistor Polarity PNP
Collector- Emitter Voltage VCEO Max - 20 V
Manufacturer ON Semiconductor
Mounting Style SMD/SMT
DC Current Gain hFE Max 280
Collector-Emitter Saturation Voltage - 250 mV
Series 2SB1302
Maximum Operating Temperature + 150 C
Continuous Collector Current - 5 A
DC Collector/Base Gain hFE Min 140
Product Category Transistors Bipolar - BJT
Package/Case PCP-3
Packaging Reel
Manufacturer Part No. 2SB1302S-TD-E
Alternate Part No. 863-2SB1302S-TD-E
Gain Bandwidth Product fT 320 MHz
Brand ON Semiconductor