2SB1122S-TD-E - ON Semiconductor View larger

2SB1122S-TD-E - ON Semiconductor

ON Semiconductor

2SB1122S-TD-E


Transistors Bipolar - BJT BIP PNP 1A 50V

$ 0.87

1633 1633 Items In Stock

Specification of 2SB1122S-TD-E

Transistor Polarity PNP
Packaging Reel
Configuration Single
Gain Bandwidth Product fT 150 MHz
Collector- Emitter Voltage VCEO Max 50 V
Manufacturer ON Semiconductor
Collector-Emitter Saturation Voltage - 0.18 V
DC Collector/Base Gain hFE Min 140
Emitter- Base Voltage VEBO - 5 V
DC Current Gain hFE Max 560
Mounting Style SMD/SMT
Brand ON Semiconductor
Minimum Operating Temperature - 55 C
Maximum Power Dissipation 1.3 W
Alternate Part No. 863-2SB1122S-TD-E
Maximum DC Collector Current - 2 A
Series 2SB1122
Collector- Base Voltage VCBO - 60 V
Manufacturer Part No. 2SB1122S-TD-E
Continuous Collector Current - 1 A
Product Category Transistors Bipolar - BJT
Maximum Operating Temperature + 150 C