2SA1417T-TD-E - ON Semiconductor View larger

2SA1417T-TD-E - ON Semiconductor

ON Semiconductor

2SA1417T-TD-E


Transistors Bipolar - BJT BIP PNP 2A 100V

$ 1.21

2583 2583 Items In Stock

Specification of 2SA1417T-TD-E

Collector-Emitter Saturation Voltage - 0.22 V
Product Category Transistors Bipolar - BJT
Series 2SA1417
Minimum Operating Temperature - 55 C
Manufacturer Part No. 2SA1417T-TD-E
Maximum DC Collector Current - 3 A
DC Current Gain hFE Max 400
Package/Case PCP-3
Alternate Part No. 863-2SA1417T-TD-E
Configuration Single
Maximum Power Dissipation 500 mW
DC Collector/Base Gain hFE Min 100
Mounting Style SMD/SMT
Transistor Polarity PNP
Collector- Base Voltage VCBO - 120 V
Manufacturer ON Semiconductor
Collector- Emitter Voltage VCEO Max - 100 V
Packaging Reel
Brand ON Semiconductor
Continuous Collector Current - 2 A
Emitter- Base Voltage VEBO - 6 V
Maximum Operating Temperature + 150 C
Gain Bandwidth Product fT 120 MHz