2SA1179N6-TB-E - ON Semiconductor View larger

2SA1179N6-TB-E - ON Semiconductor

ON Semiconductor

2SA1179N6-TB-E


Transistors Bipolar - BJT BIP PNP 0.15A 50V

$ 0.60

3339 3339 Items In Stock

Specification of 2SA1179N6-TB-E

Minimum Operating Temperature - 55 C
Product Category Transistors Bipolar - BJT
Transistor Polarity PNP
Continuous Collector Current - 150 mA
Package/Case SC-59
Series 2SA1179N
Mounting Style SMD/SMT
Manufacturer Part No. 2SA1179N6-TB-E
Alternate Part No. 863-2SA1179N6-TB-E
Configuration Single
Collector- Base Voltage VCBO - 55 V
Emitter- Base Voltage VEBO - 5 V
Maximum Power Dissipation 200 mW
Collector-Emitter Saturation Voltage - 0.15 V
Maximum Operating Temperature + 150 C
DC Current Gain hFE Max 600
Maximum DC Collector Current - 300 mA
Packaging Reel
Gain Bandwidth Product fT 180 MHz
Brand ON Semiconductor
Collector- Emitter Voltage VCEO Max - 50 V
Manufacturer ON Semiconductor