2N5088G - ON Semiconductor View larger

2N5088G - ON Semiconductor

ON Semiconductor

2N5088G


Transistors Bipolar - BJT 50mA 35V NPN

$ 0.66

6057 6057 Items In Stock

Specification of 2N5088G

Maximum Power Dissipation 625 W
Product Category Transistors Bipolar - BJT
Series 2N5088
Brand ON Semiconductor
Manufacturer ON Semiconductor
Collector-Emitter Saturation Voltage 0.5 V
Emitter- Base Voltage VEBO 3 V
Minimum Operating Temperature - 55 C
Mounting Style Through Hole
Manufacturer Part No. 2N5088G
Maximum Operating Temperature + 150 C
Collector- Emitter Voltage VCEO Max 30 V
Maximum DC Collector Current 0.05 A
Continuous Collector Current 0.05 A
Gain Bandwidth Product fT 50 MHz
DC Collector/Base Gain hFE Min 300
Transistor Polarity NPN
Package/Case TO-92-3 (TO-226)
Alternate Part No. 863-2N5088G
Configuration Single
Collector- Base Voltage VCBO 35 V
Packaging Bulk