KSE13003TH1ATU - Fairchild Semiconductor View larger

KSE13003TH1ATU - Fairchild Semiconductor

Fairchild Semiconductor

KSE13003TH1ATU


Transistors Bipolar - BJT NPN Si Transistor

$ 1.12

970 970 Items In Stock

Specification of KSE13003TH1ATU

Emitter- Base Voltage VEBO 9 V
Maximum Operating Temperature + 150 C
Configuration Single
DC Collector/Base Gain hFE Min 8
Gain Bandwidth Product fT 4 MHz
Mounting Style Through Hole
Minimum Operating Temperature - 65 C
Packaging Tube
Manufacturer Fairchild Semiconductor
Manufacturer Part No. KSE13003TH1ATU
Maximum Power Dissipation 30000 mW
Product Category Transistors Bipolar - BJT
Unit Weight 1.800 g
Alternate Part No. 512-KSE13003TH1ATU
Collector- Emitter Voltage VCEO Max 400 V
DC Current Gain hFE Max 40
Part # Aliases KSE13003TH1ATU_NL
Collector-Emitter Saturation Voltage 0.5 V
Maximum DC Collector Current 1.5 A
Continuous Collector Current 1.5 A
Transistor Polarity NPN
Package/Case TO-220-3
Collector- Base Voltage VCBO 700 V
Brand Fairchild Semiconductor
Series KSE13003