KSD363RTU - Fairchild Semiconductor View larger

KSD363RTU - Fairchild Semiconductor

Fairchild Semiconductor

KSD363RTU


Transistors Bipolar - BJT NPN Epitaxial Sil

$ 1.36

1142 1142 Items In Stock

Specification of KSD363RTU

Emitter- Base Voltage VEBO 8 V
Minimum Operating Temperature - 55 C
Series KSD363
Brand Fairchild Semiconductor
Unit Weight 1.800 g
Product Category Transistors Bipolar - BJT
Gain Bandwidth Product fT 10 MHz
Collector- Base Voltage VCBO 300 V
Maximum Operating Temperature + 150 C
Package/Case TO-220-3
DC Collector/Base Gain hFE Min 40
Packaging Tube
Manufacturer Fairchild Semiconductor
Configuration Single
Maximum Power Dissipation 40000 mW
Manufacturer Part No. KSD363RTU
Mounting Style Through Hole
Collector- Emitter Voltage VCEO Max 120 V
Maximum DC Collector Current 6 A
Transistor Polarity NPN
Alternate Part No. 512-KSD363RTU