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Transistors Bipolar - BJT
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KSA812YMTF - Fairchild Semiconductor
Transistors Bipolar - BJT PNP Epitaxial Transistor
Specification of KSA812YMTF
| Unit Weight | 60 mg |
| Minimum Operating Temperature | - 55 C |
| DC Current Gain hFE Max | 600 |
| Manufacturer Part No. | KSA812YMTF |
| Mounting Style | SMD/SMT |
| Part # Aliases | KSA812YMTF_NL |
| Brand | Fairchild Semiconductor |
| DC Collector/Base Gain hFE Min | 90 |
| Product Category | Transistors Bipolar - BJT |
| Transistor Polarity | PNP |
| Package/Case | SOT-23 |
| Maximum Power Dissipation | 150 mW |
| Continuous Collector Current | - 0.1 A |
| Collector-Emitter Saturation Voltage | - 0.18 V |
| Alternate Part No. | 512-KSA812YMTF |
| Emitter- Base Voltage VEBO | - 5 V |
| Maximum DC Collector Current | 0.1 A |
| Collector- Base Voltage VCBO | - 60 V |
| Manufacturer | Fairchild Semiconductor |
| Gain Bandwidth Product fT | 180 MHz |
| Configuration | Single |
| Packaging | Reel |
| Maximum Operating Temperature | + 150 C |
| Collector- Emitter Voltage VCEO Max | - 50 V |
| Series | KSA812 |