ATF-58143-TR1G - Avago Technologies View larger

ATF-58143-TR1G - Avago Technologies

Avago Technologies


Transistors RF JFET Transistor GaAs Single Voltage

$ 4.08

741 741 Items In Stock

Specification of ATF-58143-TR1G

Gain 16.5 dB
Technology GaAs
P1dB 19 dBm
Configuration Single Dual Source
Transistor Type EpHEMT
Brand Avago Technologies
Forward Transconductance - Min 410 mmho
Package/Case SOT-343
Alternate Part No. 630-ATF-58143-TR1G
Packaging Reel
Noise Figure 0.5 dB
Frequency 2 GHz
Manufacturer Avago Technologies
Vds - Drain-Source Breakdown Voltage 5 V
Id - Continuous Drain Current 100 mA
Maximum Operating Temperature + 150 C
Pd - Power Dissipation 500 mW
Product Category Transistors RF JFET
Manufacturer Part No. ATF-58143-TR1G
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage - 5 V to 1 V