2STC4467 - STMicroelectronics View larger

2STC4467 - STMicroelectronics

STMicroelectronics

2STC4467


Transistors Bipolar - BJT High power NPN Bipolar transistor

$ 3.47

697 697 Items In Stock

Specification of 2STC4467

Minimum Operating Temperature - 65 C
Emitter- Base Voltage VEBO 6 V
Mounting Style Through Hole
Maximum DC Collector Current 8 A
Transistor Polarity NPN
Collector- Emitter Voltage VCEO Max 120 V
Configuration Single
Maximum Power Dissipation 80000 mW
Product Category Transistors Bipolar - BJT
Brand STMicroelectronics
Alternate Part No. 511-2STC4467
Series 2STC4467
Packaging Tube
Gain Bandwidth Product fT 20 MHz
Delivery Restrictions This product may require additional documentation to export from the United States.
Package/Case TO-3P
DC Collector/Base Gain hFE Min 70 at 3 A at 4 V
Manufacturer Part No. 2STC4467
Maximum Operating Temperature + 150 C
Collector- Base Voltage VCBO 120 V
DC Current Gain hFE Max 70
Manufacturer STMicroelectronics