2N5551TA - Fairchild Semiconductor View larger

2N5551TA - Fairchild Semiconductor

Fairchild Semiconductor

2N5551TA


Transistors Bipolar - BJT NPN Transistor General Purpose

$ 0.375

23299 23299 Items In Stock

Specification of 2N5551TA

Packaging Ammo Pack
Maximum DC Collector Current 0.6 A
Mounting Style Through Hole
Product Category Transistors Bipolar - BJT
Minimum Operating Temperature - 55 C
Alternate Part No. 512-2N5551TA
Manufacturer Fairchild Semiconductor
Package/Case TO-92-3 Kinked Lead
Unit Weight 240 mg
Collector- Emitter Voltage VCEO Max 160 V
Collector-Emitter Saturation Voltage 0.2 V
Emitter- Base Voltage VEBO 6 V
Configuration Single
Manufacturer Part No. 2N5551TA
DC Collector/Base Gain hFE Min 80
Maximum Power Dissipation 625 mW
Collector- Base Voltage VCBO 180 V
Gain Bandwidth Product fT 300 MHz
Continuous Collector Current 0.6 A
Maximum Operating Temperature + 150 C
Series 2N5551
Brand Fairchild Semiconductor
Transistor Polarity NPN
DC Current Gain hFE Max 250