2N5550TA - Fairchild Semiconductor View larger

2N5550TA - Fairchild Semiconductor

Fairchild Semiconductor

2N5550TA


Transistors Bipolar - BJT NPN Si Transistor Epitaxial

$ 0.331

11946 11946 Items In Stock

Specification of 2N5550TA

Package/Case TO-92-3 Kinked Lead
Manufacturer Fairchild Semiconductor
DC Collector/Base Gain hFE Min 60
Product Category Transistors Bipolar - BJT
Series 2N5550
DC Current Gain hFE Max 250
Emitter- Base Voltage VEBO 6 V
Mounting Style Through Hole
Alternate Part No. 512-2N5550TA
Manufacturer Part No. 2N5550TA
Gain Bandwidth Product fT 300 MHz
Maximum DC Collector Current 0.6 A
Maximum Power Dissipation 625 mW
Collector-Emitter Saturation Voltage 0.25 V
Collector- Emitter Voltage VCEO Max 140 V
Brand Fairchild Semiconductor
Unit Weight 240 mg
Transistor Polarity NPN
Maximum Operating Temperature + 150 C
Configuration Single
Continuous Collector Current 0.6 A
Packaging Ammo Pack
Minimum Operating Temperature - 55 C
Collector- Base Voltage VCBO 160 V