NE3514S02-A - CEL View larger

NE3514S02-A - CEL

CEL

NE3514S02-A


Transistors RF JFET K Band Super Low Noise Amp N-Ch

$ 4.44

439 439 Items In Stock

Specification of NE3514S02-A

Brand CEL
Vgs - Gate-Source Breakdown Voltage - 3 V
Frequency 20 GHz
Product Category Transistors RF JFET
Technology GaAs
Alternate Part No. 551-NE3514S02-A
Pd - Power Dissipation 165 mW
Gain 10 dB
Maximum Operating Temperature + 125 C
Transistor Type pHEMT
Manufacturer Part No. NE3514S02-A
Forward Transconductance - Min 55 mS
Package/Case S0-2
Id - Continuous Drain Current 70 mA
Manufacturer CEL
Mounting Style SMD/SMT
Vds - Drain-Source Breakdown Voltage 4 V
Packaging Bulk
Noise Figure 0.75 dB
Gate-Source Cut-off Voltage - 0.7 V