NE3509M04-A - CEL View larger

NE3509M04-A - CEL

CEL

NE3509M04-A


Transistors RF JFET L to S Band Lo Noise Amplifier N-Ch HJFET

$ 2.90

89 89 Items In Stock

Specification of NE3509M04-A

Manufacturer CEL
Id - Continuous Drain Current 60 mA
Mounting Style SMD/SMT
Transistor Type HFET
Product Category Transistors RF JFET
Noise Figure 0.4 dB
Gain 17.5 dB
Forward Transconductance - Min 80 mS
Manufacturer Part No. NE3509M04-A
Transistor Polarity N-Channel
Technology GaAs
Frequency 2 GHz
Package/Case FTSMM-4 (M04)
Maximum Operating Temperature + 150 C
Brand CEL
P1dB 11 dBm
Pd - Power Dissipation 150 mW
Vgs - Gate-Source Breakdown Voltage - 3 V
Gate-Source Cut-off Voltage - 0.5 V
Vds - Drain-Source Breakdown Voltage 4 V
Alternate Part No. 551-NE3509M04-A