NE3503M04-A - CEL View larger

NE3503M04-A - CEL

CEL

NE3503M04-A


Transistors RF JFET Low Noise HJ FET

$ 3.13

160 160 Items In Stock

Specification of NE3503M04-A

Technology GaAs
Forward Transconductance - Min 55 mS
Maximum Operating Temperature + 125 C
Manufacturer CEL
Manufacturer Part No. NE3503M04-A
Brand CEL
Vds - Drain-Source Breakdown Voltage 4 V
Pd - Power Dissipation 125 mW
Noise Figure 0.45 dB
Frequency 12 GHz
Gain 12 dB
Transistor Type HFET
Mounting Style SMD/SMT
Vgs - Gate-Source Breakdown Voltage - 3 V
Gate-Source Cut-off Voltage - 0.7 V
Alternate Part No. 551-NE3503M04-A
Transistor Polarity N-Channel
Id - Continuous Drain Current 70 mA
Package/Case FTSMM-4 (M04)
Product Category Transistors RF JFET